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t ga 2583 - sm 2.7 to 3.7ghz, 10w gan power amplifier preliminary datasheet: rev - a 0 2 - 20 - 15 - 1 of 13 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com qfn 5x5 mm 32 l applications ? commercial and military radar general description triquints tga2583 - sm is a packaged mmic power amplifie r which operates from 2.7 to 3.7 ghz. the tga2583 - sm is designed using triquints production 0.25 - m gan on sic process. th e tga2583 - sm typically provides 40 .5 d bm of saturated output power, > 50 % power - added efficiency , and 33 db small signal gain. it can ope rate under both pulse and cw conditions . the tga2583 - sm is available in a low - cost, surface mount 32 lead 5x5 ain qfn . it is ideally suited to support both commercial and defense related radar applicati ons. both rf ports have integrated dc blocking capacitors and are fully matched to 50 ohms. le ad - free and rohs compliant evaluation boards are available upon request. functional block diagram p in configuration p ad no. symbol 1, 3 - 4, 6, 8 - 9, 13, 16 - 17, 19, 21, 23 - 25, 32 gnd 3 rf out 5, 7, 10 - 11, 15, 18, 20, 26 - 31 nc 12 drain 14 gate 22 rf in product features ? frequency range: 2.7 - 3. 7 ghz ? p sat : 40 .5 dbm ? pae: > 5 0 % ? small signal gain: 33 db ? return loss: > 12 db ? bias: v d = 25 - 32 v (cw or pulsed) , i dq = 175 ma, v g = ?2.3 v t ypical ? pulsed v d : pw = 100 us, dc = 10 % ? package dimensions: 5.0 x 5.0 x 1.45 mm ordering information part eccn description tg a2583 - sm e ar99 2.7 - 3.7 ghz, 10 w gan power amplifier 9 10 11 12 13 14 15 16 1 2 3 4 5 6 7 8 24 23 22 21 20 19 18 17 32 31 30 29 28 27 26 25 rf out rf in
t ga 2583 - sm 2.7 to 3.7ghz, 10w gan power amplifier preliminary datasheet: rev - a 0 2 - 20 - 15 - 2 of 13 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com absolute maximum ratings parameter value drain voltage ( v d ) 40 v gate voltage range ( v g ) ? d ) 1 5 30 ma gate current ( i g ) ? diss ) , 85c 27 w input power (p in ) , cw, 50 , in ), cw, vswr 10:1, v d = 28 v, 85c 23 dbm channel temp erature (t ch ) 275 c mounting temperature (30 seconds) 260 c storage temperature ? operation of this device outside the parameter ranges given above may cause permanent damage. these are stress ratings only, and functional operation of the device at these conditions is not implied. recommended operating conditions parameter value drain voltage ( v d ) 25 C dq ) 175 C d_drive ) see plots p. 7 gate voltage (v g ) ?2.3 v (typ.) g_drive ) see plots p. 7 electrical specifications are measured at specified test conditions. specifications are not guaranteed over all recommended operating conditions. electrical specifications test conditions unless otherwise noted : 25 c, v d = 25 v, i dq = 175 ma, v g = ?2.3 v typ , pulsed v d : pw = 100 us, dc = 10 % parameter min typical max units operational frequency range 2. 7 3.7 ghz small signal gain 3 3 db input return loss > 15 db output return loss 12 db output power at saturation (p in = 16 dbm) 40 .5 dbm power - added efficiency (p in = 16 dbm) > 50 % gain temperature coefficient - 0.05 db/c power temperature coefficient - 0.00 5 db m /c
t ga 2583 - sm 2.7 to 3.7ghz, 10w gan power amplifier preliminary datasheet: rev - a 0 2 - 20 - 15 - 3 of 13 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com 40. thermal and reliability information parameter test conditions value units thermal resistance ( jc ) (1) t base = 85 c, v d = 25 v pulse pw = 100 us, dc = 10 % at freq = 2.9 ghz, p in = 16 dbm: i dq = 175 ma, i d _drive = 9 1 0 ma p out = 40.5 dbm p diss = 11.5 w 4 .2 c /w channel temperature (t ch ) (under rf drive) 1 33 c median lifetime (t m ) 1.24 e+10 hrs notes: 1. thermal resistance measured to back of package. test conditions: v d = 40 v; failure criteria = 10% reduction in i d_max 1e+04 1e+05 1e+06 1e+07 1e+08 1e+09 1e+10 1e+11 1e+12 1e+13 1e+14 1e+15 1e+16 1e+17 1e+18 25 50 75 100 125 150 175 200 225 250 275 median lifetime, t m (hours) channel temperature, t ch ( ? c) median lifetime vs. channel temperature fet 13 10 11 12 13 14 15 16 17 18 19 20 21 22 2.3 2.5 2.7 2.9 3.1 3.3 3.5 3.7 3.9 4.1 power dissipation (w) frequency (ghz) p diss vs. frequency vs. t base +85 c +25 c ?40 c pulsed v d = 28 v, i dq = 175 ma, p in = 16 dbm, pw = 100 us, dc = 10% 5 6 7 8 9 10 11 12 13 14 15 16 17 2.3 2.5 2.7 2.9 3.1 3.3 3.5 3.7 3.9 4.1 power dissipation (w) frequency (ghz) p diss vs. frequency vs. t base +85 c +25 c ?40 c pulsed v d = 25 v, i dq = 175 ma, p in = 16 dbm, pw = 100 us, dc = 10% 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 8 10 12 14 16 18 20 22 r jc (c/w) p diss (w) thermal resistance vs. p diss cw pulse: 3 00us 10% pulse: 100us 10% pulse: 100us 20% pulse: 300us 10% t base = 85 0 c
t ga 2583 - sm 2.7 to 3.7ghz, 10w gan power amplifier preliminary datasheet: rev - a 0 2 - 20 - 15 - 4 of 13 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com typical performance : small signal condition: cw 16 18 20 22 24 26 28 30 32 34 36 38 40 2.1 2.3 2.5 2.7 2.9 3.1 3.3 3.5 3.7 3.9 4.1 s21 (db) frequency (ghz) gain vs. frequency vs. v d 25 v 28 v 30 v i dq = 175 ma temp. = +25 c 16 18 20 22 24 26 28 30 32 34 36 38 40 2.1 2.3 2.5 2.7 2.9 3.1 3.3 3.5 3.7 3.9 4.1 s21 (db) frequency (ghz) gain vs. frequency vs. temperature +85 c +25 c ?40 c v d = 25 v, i dq = 175 ma -30 -27 -24 -21 -18 -15 -12 -9 -6 -3 0 2.1 2.3 2.5 2.7 2.9 3.1 3.3 3.5 3.7 3.9 4.1 s11 (db) frequency (ghz) input return loss vs. frequency vs. v d i dq = 175 ma temp. = +25 c 25 v 28 v 30 v -30 -27 -24 -21 -18 -15 -12 -9 -6 -3 0 2.1 2.3 2.5 2.7 2.9 3.1 3.3 3.5 3.7 3.9 4.1 s11 (db) frequency (ghz) input return loss vs. freq. vs. temperature +85 c +25 c ?40 c v d = 25 v, i dq = 175 ma -30 -27 -24 -21 -18 -15 -12 -9 -6 -3 0 2.1 2.3 2.5 2.7 2.9 3.1 3.3 3.5 3.7 3.9 4.1 s22 (db) frequency (ghz) output return loss vs. frequency vs. v d 25 v 28 v 30 v i dq = 175 ma temp. = +25 c -30 -27 -24 -21 -18 -15 -12 -9 -6 -3 0 2.1 2.3 2.5 2.7 2.9 3.1 3.3 3.5 3.7 3.9 4.1 s22 (db) frequency (ghz) output return loss vs. freq. vs. temperature +85 c +25 c ?40 c v d = 25 v, i dq = 175 ma
t ga 2583 - sm 2.7 to 3.7ghz, 10w gan power amplifier preliminary datasheet: rev - a 0 2 - 20 - 15 - 5 of 13 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com typical performance : large signal condition: pulsed v d , pulse width = 100 us, duty cycle = 10% 35 36 37 38 39 40 41 42 43 44 2.3 2.5 2.7 2.9 3.1 3.3 3.5 3.7 3.9 4.1 output power (dbm) frequency (ghz) output power vs. frequency vs. v d 25 v 28 v 32 v i dq = 175 ma, p in = 16 dbm 35 36 37 38 39 40 41 42 43 44 2.3 2.5 2.7 2.9 3.1 3.3 3.5 3.7 3.9 4.1 output power (dbm) frequency (ghz) output power vs. frequency vs. v d v d = 25 v, p in = 16 dbm 175 ma 350 ma 35 36 37 38 39 40 41 42 43 44 2.3 2.5 2.7 2.9 3.1 3.3 3.5 3.7 3.9 4.1 output power (dbm) frequency (ghz) output power vs. frequency vs. temp. +85 c +25 c ?40 c v d = 28 v, i dq = 175 ma, p in = 16 dbm 20 22 24 26 28 30 32 34 36 38 40 42 44 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 18 20 output power (dbm) input power (dbm) output power vs. input power vs. temp. +85 c +25 c ?40 c v d = 28 v, i dq = 175 ma, 2.7 ghz 20 22 24 26 28 30 32 34 36 38 40 42 44 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 18 20 output power (dbm) input power (dbm) output power vs. input power vs. freq. 2.7 ghz 3.1 ghz 3.5 ghz temp. = + 25 c v d = 25 v, i dq = 175 ma
t ga 2583 - sm 2.7 to 3.7ghz, 10w gan power amplifier preliminary datasheet: rev - a 0 2 - 20 - 15 - 6 of 13 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com typical performance : large signal condition: pulsed v d , pulse width = 100 us, duty cycle = 10% 20 25 30 35 40 45 50 55 60 65 2.3 2.5 2.7 2.9 3.1 3.3 3.5 3.7 3.9 4.1 power - added efficiency (%) frequency (ghz) pae vs. frequency vs. v d i dq = 175 ma, p in = 16 dbm 25 v 28 v 32 v 20 25 30 35 40 45 50 55 60 65 2.3 2.5 2.7 2.9 3.1 3.3 3.5 3.7 3.9 4.1 power - added efficiency (%) frequency (ghz) pae vs. frequency vs. i dq v d = 25 v , p in = 16 dbm 175 ma 350 ma 20 25 30 35 40 45 50 55 60 65 2.3 2.5 2.7 2.9 3.1 3.3 3.5 3.7 3.9 4.1 power - added efficiency (%) frequency (ghz) pae vs. frequency vs. temp. +85 c +25 c ?40 c v d = 28 v, i dq = 175 ma, p in = 16 dbm 16 18 20 22 24 26 28 30 32 34 36 38 40 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 18 20 gain (db) input power (dbm) power gain vs. input power vs. temp. +85 c +25 c ?40 c i dq = 175 ma, v d = 28 v, 2.7 ghz 0 5 10 15 20 25 30 35 40 45 50 55 60 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 18 20 power - added efficiency (%) input power (dbm) pae vs. input power vs. freq. 2.7 ghz 3.1 ghz 3.5 ghz temp. = + 25 c v d = 25 v, i dq = 175 ma 16 18 20 22 24 26 28 30 32 34 36 38 40 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 18 20 gain (db) input power (dbm) power gain vs. input power vs. freq. 2.7 ghz 3.1 ghz 3.5 ghz temp. = + 25 c v d = 25 v, i dq = 175 ma
t ga 2583 - sm 2.7 to 3.7ghz, 10w gan power amplifier preliminary datasheet: rev - a 0 2 - 20 - 15 - 7 of 13 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com typical performance : large signal condition: pulsed v d , pulse width = 100 us, duty cycle = 10% 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 2.3 2.5 2.7 2.9 3.1 3.3 3.5 3.7 3.9 4.1 drain current (a) frequency (ghz) drain current vs. frequency vs. temp. +85 c +25 c ?40 c v d = 28 v, i dq = 175 ma, p in = 16 dbm -1.0 -0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 2.3 2.5 2.7 2.9 3.1 3.3 3.5 3.7 3.9 4.1 gate current (ma) frequency (ghz) gate current vs. frequency vs. temp. +85 c +25 c ?40 c v d = 28 v, i dq = 175 ma, p in = 16 dbm -1.0 -0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 18 20 gate current (ma) input power (dbm) gate current vs. input power vs. freq. 2.7 ghz 3.1 ghz 3.5 ghz temp. = + 25 c v d = 25 v, i dq = 175 ma 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 18 20 drain current (a) input power (dbm) drain current vs. input power vs. freq. 2.7 ghz 3.1 ghz 3.5 ghz temp. = +25 c v d = 25 v, i dq = 175 ma -1.0 -0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 2.3 2.5 2.7 2.9 3.1 3.3 3.5 3.7 3.9 4.1 gate current (ma) frequency (ghz) gate current vs. frequency vs. v d i dq = 175 ma, p in = 16 dbm 25 v 28 v 32 v 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 2.3 2.5 2.7 2.9 3.1 3.3 3.5 3.7 3.9 4.1 drain current (a) frequency (ghz) drain current vs. frequency vs. v d 25 v 28 v 32 v i dq = 175 ma, p in = 16 dbm
t ga 2583 - sm 2.7 to 3.7ghz, 10w gan power amplifier preliminary datasheet: rev - a 0 2 - 20 - 15 - 8 of 13 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com applications information notes: 1. remove if pulsing on d rain bias - up procedure 1. set i d limit to 1.5 3 a, i g limit to 8 ma 2 . apply ?5 v to v g 3 . apply +25 v to v d ; en sure i dq is approx. 0 ma 4 . adjust v g until i dq = 175 ma (v g ~ ?2.3 v typ.). 5. turn o n rf supply bias - down procedure 1. turn off rf supply 2. reduce v g to ? 5 v; e nsure i dq is approx. 0 ma 3 . set v d to 0 v 4 . turn off v d supply 5. turn off v g supply rf out v g 9 10 11 12 13 14 15 16 1 2 3 4 5 6 7 8 24 23 22 21 20 19 18 17 32 31 30 29 28 27 26 25 c2 0.01 uf r2 15 ohm c4 1 uf c1 (1) 0.01 uf r1 (1) 15 ohm c3 (1) 1 uf rf in v d
t ga 2583 - sm 2.7 to 3.7ghz, 10w gan power amplifier preliminary datasheet: rev - a 0 2 - 20 - 15 - 9 of 13 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com pin layout pin description p in n o. symbol description 1, 3 - 4, 6, 8 - 9, 13, 16 - 17, 19, 21, 23 - 25, 32 gnd connected to ground paddle (pin 33); must be grounded on pcb 3 rf out output ; matched to 50 ; dc blocked 5, 7, 10 - 11, 15, 18, 20, 26 - 31 nc no connectio n 12 drain drain voltage; b ias network is required; see recommended application information on page 8 14 gate gate voltage; b ias network is required; see recommended application information on page 8 22 rf in input; matched to 50 ; dc blocked 33 gnd ground paddle. multiple vias should be employed to minimize inductance and thermal resistance.
t ga 2583 - sm 2.7 to 3.7ghz, 10w gan power amplifier preliminary datasheet: rev - a 0 2 - 20 - 15 - 10 of 13 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com evaluation board bill of material reference des. value description manuf. part number c1, c2 0.01 f cap, 0402, 50 v, 10 % , x7r various c3, c4 1 f cap, 0805, 50 v, 10 % , x7r various r1, r2 15 ohm res, 0402 , 5% various rf in rf out v g v d p in1 c1 c2 c3 c4 r1 r2
t ga 2583 - sm 2.7 to 3.7ghz, 10w gan power amplifier preliminary datasheet: rev - a 0 2 - 20 - 15 - 11 of 13 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com mechanical information units: i nches tolerances: u nless specified x.xx = 0.01 x.xxx = 0.005 materials: base: ceramic lid: plastic all metalized features are gold plated part is epoxy s ealed marking: 2583: part number yy: part assembly year ww: part assembly week mxxx : batch id
t ga 2583 - sm 2.7 to 3.7ghz, 10w gan power amplifier preliminary datasheet: rev - a 0 2 - 20 - 15 - 12 of 13 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com recommended soldering temperature profile
t ga 2583 - sm 2.7 to 3.7ghz, 10w gan power amplifier preliminary datasheet: rev - a 0 2 - 20 - 15 - 13 of 13 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com product compliance information esd sensitivity ratings caution! esd - sensitive device esd rating: tbd value: tbd test: human body model (hbm) standard: jedec standard jesd22 - a114 solderability comp atible with the latest version of j - std - 020, lead - free solder, 260 c roh s compliance this part is compliant with eu 2002/95/ec rohs directive (restrictions on the use of certain hazardous substances in electrical and electronic equipment). this product also has the following attributes: ? ? ? ? 15 h 12 br 4 0 2 ) free ? ? msl rating level tbd at tbd c convection reflow the part is ra ted moisture sensitivity level tbd at tbd c per jedec standard ipc/jedec j - std - 020. eccn us department of commerce : e ar99 contact information for the latest specifications, additional product information, worldwide sales and distribution locations, and information about triquint: web: www.triquint.com tel: +1. 972 . 994 . 8465 email: info - sales@triquint.com fax: +1. 972 . 994 . 8504 for technical questions and application information: email: info - products@tri quint.com important notice the information contained herein is believed to be reliable. triquint makes no warranties regarding the information contained herein. triquint assumes no responsibility or liability whatsoever for any of the information contained herein. triquint assumes no responsibility or liability whatsoever for the use of the information contained herein. the information contained herein is provided "as i s, where is" and with all faults, and the entire risk associated with such information is entirely with the user. all information contained herein is subject to change without notice. customers should obtain and verify the latest relevant information bef ore placing orders for triquint products. the information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. triquint products are not warranted or authorized for use as critical components in medical, life - saving, or life - sustaining applications, or other applications where a failure would rea sonably be expected to cause severe personal injury or death.

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